Electron Beam Lithography

Electron-beam lithography (often abbreviated as e-beam lithography, EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing).[1] The electron beam changes the solubility of the resist, enabling selective removal of either the exposed or non-exposed regions of the resist by immersing it in a solvent (developing). The purpose, as with photolithography, is to create very small structures in the resist that can subsequently be transferred to the substrate material, often by etching.

Electron trajectories in resist: An incident electron (red) produces secondary electrons (blue). Sometimes, the incident electron may itself be backscattered as shown here and leave the surface of the resist (amber).

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Resources

Wikipedia readings

• Wikipedia: Electron-beam lithography

See Also

• Electric VLSI Design System