Fundamental Physics/Electronics/Field-Effect Transistors/MOSFET

MOSFETEdit

 

The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET). It has an insulated gate, whose voltage determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor or MISFET is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect-transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925.


MadeEdit

 

ReferenceEdit

[[[Wikipedia:MOSFET|MOSFET]]]